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Synthesis and Optoelectronic Properties of Pyrite (FeS2) Nanocrystals Thin Films for Photovoltaic Applications

Identifieur interne : 000421 ( Main/Repository ); précédent : 000420; suivant : 000422

Synthesis and Optoelectronic Properties of Pyrite (FeS2) Nanocrystals Thin Films for Photovoltaic Applications

Auteurs : RBID : Pascal:13-0318726

Descripteurs français

Pascal (Inist)
- Traitement thermique, Microscopie électronique balayage, Dimension particule, Caractéristique courant tension, Nanocristal, Couche mince, Interface, Nanomatériau, Couche ITO, Composé du fer, Propriété optoélectronique, Pyrite, Système photovoltaïque, FeS2, ITO, 8107B.

English descriptors

KwdEn :
- Heat treatment, ITO layers, Interface, Iron compound, Nanocrystal, Nanostructured materials, Optoelectronic properties, Particle size, Photovoltaic system, Pyrite, Scanning electron microscopy, Thin film, Voltage current curve.

Abstract

Nanocrystal (NCs) pyrite FeS₂ were synthesized on indium thin oxide (ITO) substrate by using thermal reaction of iron-oleyamine complexes with sulfur in olayamine. The structural and optical characterizations of FeS₂ NCs were investigated and the effect of annealing temperature on thin film properties was discussed. The Scanning Electron Microscope (SEM) images shows that FeS₂ films have between 25 nm and 100 nm diameter and as the annealing temperature on the thin film increased, the particle size increased. The absorption spectrums show that FeS₂ NCs have direct band gap between 1.27 and 2.04 eV which is much higher than that of bulk FeS₂ (0.95 eV). The changes of particle size can be attributed to the different interactions of surface energy and interface energy at different annealing temperatures. Current-Voltage characteristics show that NCs FeS₂ has high conductivity and it was found that when annealing temperature of thin films increases, conductivity decreases. The surface photo voltage (SPVs) of FeS₂ films was studied to explore their potential in photovoltaic application as well.

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Pascal:13-0318726

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synthesis and Optoelectronic Properties of Pyrite (FeS<sub>2</sub>
) Nanocrystals Thin Films for Photovoltaic Applications</title>
<author><name sortKey="Kilic, Bayram" uniqKey="Kilic B">Bayram Kilic</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Department of Energy Systems Engineering, Yalova University</s1>
<s2>77100, Yalova</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>77100, Yalova</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Roehling, John" uniqKey="Roehling J">John Roehling</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Chemical Engineering and Material Science Department, University of California, One Shields Avenue</s1>
<s2>Davis, CA 95616</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Davis, CA 95616</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ozmen, Ozge T Z N" uniqKey="Ozmen Ö">Özge T Z N Özmen</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Faculty of Arts and Sciences, Department of Physics, Düzce University, Konuralp Campus</s1>
<s2>81620 Düzce</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>81620 Düzce</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0318726</idno>
<date when="2013">2013</date>
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<seriesStmt><idno type="ISSN">1555-130X</idno>
<title level="j" type="abbreviated">J. nanoelectron. optoelectron.</title>
<title level="j" type="main">Journal of nanoelectronics and optoelectronics</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Heat treatment</term>
<term>ITO layers</term>
<term>Interface</term>
<term>Iron compound</term>
<term>Nanocrystal</term>
<term>Nanostructured materials</term>
<term>Optoelectronic properties</term>
<term>Particle size</term>
<term>Photovoltaic system</term>
<term>Pyrite</term>
<term>Scanning electron microscopy</term>
<term>Thin film</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement thermique</term>
<term>Microscopie électronique balayage</term>
<term>Dimension particule</term>
<term>Caractéristique courant tension</term>
<term>Nanocristal</term>
<term>Couche mince</term>
<term>Interface</term>
<term>Nanomatériau</term>
<term>Couche ITO</term>
<term>Composé du fer</term>
<term>Propriété optoélectronique</term>
<term>Pyrite</term>
<term>Système photovoltaïque</term>
<term>FeS2</term>
<term>ITO</term>
<term>8107B</term>
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<front><div type="abstract" xml:lang="en">Nanocrystal (NCs) pyrite FeS<sub>2</sub>
 were synthesized on indium thin oxide (ITO) substrate by using thermal reaction of iron-oleyamine complexes with sulfur in olayamine. The structural and optical characterizations of FeS<sub>2</sub>
 NCs were investigated and the effect of annealing temperature on thin film properties was discussed. The Scanning Electron Microscope (SEM) images shows that FeS<sub>2</sub>
 films have between 25 nm and 100 nm diameter and as the annealing temperature on the thin film increased, the particle size increased. The absorption spectrums show that FeS<sub>2</sub>
 NCs have direct band gap between 1.27 and 2.04 eV which is much higher than that of bulk FeS<sub>2</sub>
 (0.95 eV). The changes of particle size can be attributed to the different interactions of surface energy and interface energy at different annealing temperatures. Current-Voltage characteristics show that NCs FeS<sub>2</sub>
 has high conductivity and it was found that when annealing temperature of thin films increases, conductivity decreases. The surface photo voltage (SPVs) of FeS<sub>2</sub>
 films was studied to explore their potential in photovoltaic application as well.</div>
</front>
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<fA11 i1="01" i2="1"><s1>KILIC (Bayram)</s1>
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<fA11 i1="02" i2="1"><s1>ROEHLING (John)</s1>
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<fA11 i1="03" i2="1"><s1>ÖZMEN (Özge Tüzün)</s1>
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<fA14 i1="01"><s1>Faculty of Engineering, Department of Energy Systems Engineering, Yalova University</s1>
<s2>77100, Yalova</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Chemical Engineering and Material Science Department, University of California, One Shields Avenue</s1>
<s2>Davis, CA 95616</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Faculty of Arts and Sciences, Department of Physics, Düzce University, Konuralp Campus</s1>
<s2>81620 Düzce</s2>
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<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Nanocrystal (NCs) pyrite FeS<sub>2</sub>
 were synthesized on indium thin oxide (ITO) substrate by using thermal reaction of iron-oleyamine complexes with sulfur in olayamine. The structural and optical characterizations of FeS<sub>2</sub>
 NCs were investigated and the effect of annealing temperature on thin film properties was discussed. The Scanning Electron Microscope (SEM) images shows that FeS<sub>2</sub>
 films have between 25 nm and 100 nm diameter and as the annealing temperature on the thin film increased, the particle size increased. The absorption spectrums show that FeS<sub>2</sub>
 NCs have direct band gap between 1.27 and 2.04 eV which is much higher than that of bulk FeS<sub>2</sub>
 (0.95 eV). The changes of particle size can be attributed to the different interactions of surface energy and interface energy at different annealing temperatures. Current-Voltage characteristics show that NCs FeS<sub>2</sub>
 has high conductivity and it was found that when annealing temperature of thin films increases, conductivity decreases. The surface photo voltage (SPVs) of FeS<sub>2</sub>
 films was studied to explore their potential in photovoltaic application as well.</s0>
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<s5>41</s5>
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<s5>42</s5>
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<s5>42</s5>
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<s5>61</s5>
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<s5>65</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Pyrite</s0>
<s5>67</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Pyrite</s0>
<s5>67</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Pirita</s0>
<s5>67</s5>
</fC03>
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<s5>68</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Photovoltaic system</s0>
<s5>68</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Sistema fotovoltaico</s0>
<s5>68</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>FeS2</s0>
<s4>INC</s4>
<s5>83</s5>
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<fC03 i1="15" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>84</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>301</s1>
</fN21>
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Synthesis and Optoelectronic Properties of Pyrite (FeS2) Nanocrystals Thin Films for Photovoltaic Applications

Synthesis and Optoelectronic Properties of Pyrite (FeS2) Nanocrystals Thin Films for Photovoltaic Applications

Descripteurs français

English descriptors

Abstract

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Pour manipuler ce document sous Unix (Dilib)

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